Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

Luminescence properties of defects in GaN

M. A. Reshchikov, H. Morkoç̌ · Journal of Applied Physics · 2005 · 1.9K citations

Engineering, Materials Engineering, Materials Science +17

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto et al. · Japanese Journal of Applied Physics · 2001 · 313 citations

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X-ray measurements of dislocation density in deformed Copper and Aluminum single crystals

M. J. Hordon, B. L. Averbach · Acta Metallurgica · 1961 · 199 citations

Natural Sciences, Materials Science, Physics +16

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Takehiro Yoshida, Yuichi Oshima, Takeshi Eri et al. · Journal of Crystal Growth · 2007 · 125 citations

Engineering, Materials Engineering, Materials Science +15

GaN Substrates—Progress, Status, and Prospects

T. Paskova, K. R. Evans · IEEE Journal of Selected Topics in Quantum Electronics · 2009 · 106 citations

Engineering, Materials Engineering, Materials Science +17