E. Richter

Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

E. Richter, Ch. Hennig, M. Weyers et al. · Journal of Crystal Growth · 2005 · 62 citations

Engineering, Materials Engineering, Materials Science +15

Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

G. Sonia, U. Zeimer, L. Wang et al. · IEEE Transactions on Nuclear Science · 2006 · 52 citations

Engineering, Electrical Engineering, Materials Science +15

AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs

Sylvia Hagedorn, A. Knauer, Anna Mogilatenko et al. · physica status solidi (a) · 2016 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +17

Current Status of Carbon‐Related Defect Luminescence in GaN

F. Zimmermann, Jan Beyer, Christian Röder et al. · physica status solidi (a) · 2021 · 45 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates

E. Cho, Anna Mogilatenko, Frank Brunner et al. · Journal of Crystal Growth · 2013 · 39 citations

Engineering, Materials Engineering, Materials Science +14