Peter Brückner

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Davide Bisi, Matteo Meneghini, Carlo De Santi et al. · IEEE Transactions on Electron Devices · 2013 · 434 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications

E.M. Suijker, M. Rodenburg, J.A. Hoogland et al. · 2009 · 85 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Ka-band Lna +11

D-Band and G-Band High-Performance GaN Power Amplifier MMICs

Maciej Ćwikliński, Peter Brückner, Stefano Leone et al. · IEEE Transactions on Microwave Theory and Techniques · 2019 · 79 citations

Power Amplifiers, Wide-bandgap Semiconductor, Electrical Engineering +10

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

Sebastian Krause, Isabel Streicher, Patrick Waltereit et al. · IEEE Electron Device Letters · 2022 · 70 citations · Full text

Wide-bandgap Semiconductor, Alscn/gan Wafer, Electrical Engineering +10

Ultra-Wideband GaN MMIC Chip Set and High Power Amplifier Module for Multi-Function Defense AESA Applications

U. Schmid, H. Sledzik, Patrick Schuh et al. · IEEE Transactions on Microwave Theory and Techniques · 2013 · 67 citations

Radar, Wide-bandgap Semiconductor, Electrical Engineering +15