IEEE Transactions on Microwave Theory and Techniques · 2013 · 69 citations · 14 references
EngineeringElectrical EngineeringAntennasMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave MeasurementsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsGallium NitrideGallium Nitride Microwave Integrated CircuitsHigh-electron-mobility TransistorsMaximum Power OutputMicrowave DevicesMonolithic Microwave Integrated CircuitsPower GainPower Output
This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set and of an ultra-wideband high power amplifier (HPA) transmit module for multi-functional next-generation active electronically scanned antenna radar/electronic warfare/communication applications targeting the frequency range from 6 to 18 GHz. The reported chip set consists of a driver amplifier (DA) MMIC and an HPA MMIC on a high-power gallium-nitride process with high electronic-mobility transistors. The DA reaches a power gain of 11 dB and maximum output power of 2 W, which is sufficient to drive a final stage in a balanced configuration. The HPA reaches a typical output power of 12.5 and 10.6 W in pulsed and continuous wave (CW) operation, respectively. Measurements on the module level indicate 18.5-W typical output power in both pulsed and CW operation.
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