Isabel Streicher

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

Sebastian Krause, Isabel Streicher, Patrick Waltereit et al. · IEEE Electron Device Letters · 2022 · 70 citations · Full text

Wide-bandgap Semiconductor, Alscn/gan Wafer, Electrical Engineering +10

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al_0.85Sc_0.15N

Niklas Wolff, Georg Schönweger, Isabel Streicher et al. · Advanced Physics Research · 2024 · 48 citations · Full text

Aluminium Nitride, Engineering, Crystal Growth Technology +18

Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

Isabel Streicher, Stefano Leone, Lutz Kirste et al. · physica status solidi (RRL) - Rapid Research Letters · 2022 · 44 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

Isabel Streicher, Stefano Leone, C. Manz et al. · Crystal Growth & Design · 2023 · 36 citations

Wide-bandgap Semiconductor, Nominal Aln Interlayer, Aluminium Nitride +18

Understanding Interfaces in AlScN/GaN Heterostructures

Isabel Streicher, Stefano Leone, Meiling Zhang et al. · Advanced Functional Materials · 2024 · 30 citations · Full text

Materials Science, Aluminium Nitride, Electrical Engineering +12