Lutz Kirste - Concepedia

Author

Lutz Kirste

Fraunhofer Institute for Applied Solid State Physics ORCID

Also Known As

Kirste, L., Kirste, Lutz, L Kirste, L. Kirste, Lutz Kirste

276

Publications

4.6K

Citations

H-Index

101

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics University of Freiburg Universität Ulm Technische Universität Ilmenau Fraunhofer Institute for Mechanics of Materials

About

Lutz Kirste is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	100	3.6K
2	Applied Physics	33	98	3.2K
3	Chemistry	12	12	857
4	Natural Sciences	5	5	111
5	Chemical Engineering	5	5	577

Lutz Kirste

117

Publications

Citations

H-Index

Page 1

	Year	Citations
Size-Dependent Reactivity of Diamond Nanoparticles Oliver A. Williams, Jakob Hees, C. Dieker, ACS Nano Materials ScienceNanoparticlesNanomedicineChemical EngineeringEngineering	2010	376
Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties O. Ambacher, B. Christian, Niclas M. Feil, Journal of Applied Physics Aluminium NitrideCrystal StructureEngineeringWurtzite ScalnPiezoelectric Tensor	2021	143
Elastic modulus and coefficient of thermal expansion of piezoelectric Al<sub>1−x</sub>Sc<sub>x</sub>N (up to x = 0.41) thin films Yuan Lu, Markus Reusch, Nicolas Kurz, APL Materials	2018	118
Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride Stefano Leone, Jana Ligl, C. Manz, physica status solidi (RRL) - Rapid Research Letters Aluminum Scandium NitrideEngineeringOptoelectronic DevicesChemistryChemical Deposition	2019	115
Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators Nicolas Kurz, Anli Ding, Daniel F. Urban, Journal of Applied Physics Aluminium NitrideEngineeringPiezoelectric CoefficientPiezoelectric CoefficientsPhysical Acoustic	2019	98
Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41 M. Baeumler, Yuan Lu, Nicolas Kurz, Journal of Applied Physics Materials ScienceIi-vi SemiconductorWurtzite Al1−xscxn/al2o3Aluminium NitrideEngineering	2019	90
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition C. Manz, Stefano Leone, Lutz Kirste, Semiconductor Science and Technology Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringSin XEngineering	2021	77
Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures Jana Ligl, Stefano Leone, C. Manz, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2020	75
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE Kathrin Frei, Raúl Trejo-Hernández, Sebastian Schütt, Japanese Journal of Applied Physics	2019	74
Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films Yuan Lu, Markus Reusch, Nicolas Kurz, physica status solidi (a) Materials ScienceAluminium NitrideEngineeringMicrofabricationSurface Science	2017	73

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