Sebastian Krause

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

Sebastian Krause, Isabel Streicher, Patrick Waltereit et al. · IEEE Electron Device Letters · 2022 · 70 citations · Full text

Wide-bandgap Semiconductor, Alscn/gan Wafer, Electrical Engineering +10

First Demonstration of G-Band Broadband GaN Power Amplifier MMICs Operating Beyond 200 GHz

Maciej Ćwikliński, Peter Brückner, Stefano Leone et al. · 2020 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Technology +8

Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies

Philipp Neininger, M. Mikulla, Philipp Döring et al. · e-Prime - Advances in Electrical Engineering Electronics and Energy · 2023 · 22 citations · Full text

High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

R. Quay, Dirk Schwantuschke, Erdin Ture et al. · physica status solidi (a) · 2018 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Investigations of Active Antenna Doherty Power Amplifier Modules Under Beam-Steering Mismatch

Bersant Gashi, Sebastian Krause, R. Quay et al. · IEEE Microwave and Wireless Components Letters · 2018 · 20 citations

Wireless Communications, Electrical Engineering, Gan-based Dpa +10