M. Mikulla

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Davide Bisi, Matteo Meneghini, Carlo De Santi et al. · IEEE Transactions on Electron Devices · 2013 · 434 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

35 nm metamorphic HEMT MMIC technology

Arnulf Leuther, A. Tessmann, R. Lösch et al. · 2008 · 95 citations

Semiconductors, Nm Mhemt Technology, Electrical Engineering +12

50 nm MHEMT Technology for G- and H-Band MMICs

Arnulf Leuther, A. Tessmann, Michael Dammann et al. · 2007 · 80 citations

Semiconductors, Nm Mhemt Technology, Electrical Engineering +15

Metamorphic HEMT technology for low-noise applications

Arnulf Leuther, A. Tessmann, Ingmar Kallfass et al. · 2009 · 66 citations

Metamorphic Hemt Technology, Electrical Engineering, Engineering +13

High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures

M. Mikulla, P. Chazan, A. Schmitt et al. · IEEE Photonics Technology Letters · 1998 · 63 citations

Engineering, Laser Science, Optical Transmission System +16