35 nm metamorphic HEMT MMIC technology

Abstract

A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs and 6.1times1012 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , respectively. To enable a maximum extrinsic transconductance g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m,</sub> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> of 515 GHz was achieved for a 2 times 10 mum device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.