Concepedia

Author

Michael Dammann

Fraunhofer Institute for Applied Solid State PhysicsORCID

Also Known As

Andrew Barnes, Dammann, Michael, Michael Dammann

33

Publications

737

Citations

8

H-Index

18

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics
MD

About

Michael Dammann is an author at Fraunhofer Institute for Applied Solid State Physics specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

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679

2

Applied Physics

7

7

679

3

Electrical Engineering

7

7

679

4

Physics

2

2

511

5

Electronic Devices

2

2

94

Michael Dammann

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7

Publications

679

Citations

7

H-Index

YearCitations

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Davide Bisi, Matteo Meneghini, Carlo De Santi,

IEEE Transactions on Electron Devices

2013

434

50 nm MHEMT Technology for G- and H-Band MMICs

Arnulf Leuther, A. Tessmann, Michael Dammann,

2007

80

35 nm mHEMT Technology for THz and ultra low noise applications

Arnulf Leuther, A. Tessmann, Michael Dammann,

2013

77

AlGaN/GaN epitaxy and technology

Patrick Waltereit, W. Bronner, R. Quay,

International Journal of Microwave and Wireless Technologies

2010

33

Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power

Dirk Schwantuschke, Peter Brückner, Sandrine Wagner,

2017

22

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

M. Baeumler, Frank Gütle, V. M. Polyakov,

Journal of Electronic Materials

2010

19

Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production

R. Aidam, Patrick Waltereit, Lutz Kirste,

physica status solidi (a)

2010

14

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