A. Shikanai

Biaxial strain dependence of exciton resonance energies in wurtzite GaN

A. Shikanai, T. Azuhata, Takayuki Sota et al. · Journal of Applied Physics · 1997 · 250 citations

Materials Science, Semiconductor Technology, Wide-bandgap Semiconductor +11

Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

Shigefusa F. Chichibu, A. Shikanai, T. Azuhata et al. · Applied Physics Letters · 1996 · 121 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +14

Luminescence spectra from InGaN multiquantum wells heavily doped with Si

Takahiro Deguchi, A. Shikanai, K. Torii et al. · Applied Physics Letters · 1998 · 85 citations

Photonics, Electrical Engineering, Optical Materials +13

Brillouin scattering study of ZnO

T. Azuhata, Masaki Takesada, T. Yagi et al. · Journal of Applied Physics · 2003 · 75 citations

Engineering, Whole Set, Elastic Stiffness Constants +16

Recombination dynamics in low‐dimensional nitride semiconductors

Yoichi Kawakami, Akio Kaneta, Kunimichi Omae et al. · physica status solidi (b) · 2003 · 25 citations

Optical Materials, Engineering, Optoelectronic Devices +18