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Biaxial strain dependence of exciton resonance energies in wurtzite GaN
250
Citations
28
References
1997
Year
Materials ScienceSemiconductor TechnologyWide-bandgap SemiconductorStrain DependenceEngineeringPhysicsBiaxial Strain DependenceApplied PhysicsQuantum MaterialsCondensed Matter PhysicsFree-exciton Resonance EnergiesAluminum Gallium NitrideGan Power DevicePhotoreflectance Measurements
We have systematically studied the strain dependence of the free-exciton resonance energies in wurtzite GaN by photoreflectance measurements using well-characterized samples. The experimental data have been analyzed using the appropriate Hamiltonian for the valence bands in wurtzite GaN and determined the values of the crystal field splitting, the spin–orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Discussions are given on the strain dependence of the energy gaps, of the effective masses, and of the binding energies for the free-exciton ground states as well as on the valence-band parameters.
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