Journal of Applied Physics · 1997 · 250 citations · 28 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsQuantum MechanicsAb Initio MethodsElectronic Band StructureSemiconductor PhysicsStrain AnalysisWide Band Gap SemiconductorsWide-bandgap SemiconductorsBiaxial StrainEnergy Gap AnalysisExciton Binding EnergyExcitonsSpin-orbit SplittingStrain EffectsValence BandValence Band Structure
We have systematically studied the strain dependence of the free-exciton resonance energies in wurtzite GaN by photoreflectance measurements using well-characterized samples. The experimental data have been analyzed using the appropriate Hamiltonian for the valence bands in wurtzite GaN and determined the values of the crystal field splitting, the spin–orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Discussions are given on the strain dependence of the energy gaps, of the effective masses, and of the binding energies for the free-exciton ground states as well as on the valence-band parameters.
28
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations