MOVPE growth and characterization of Mg-doped GaN

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Thermal Annealing Effects on P-Type Mg-Doped GaN Films

Shuji Nakamura, Takashi Mukai, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 1992 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Nature of the 2.8 eV photoluminescence band in Mg doped GaN

U. Kaufmann, M. Kunzer, Matthias Maier et al. · Applied Physics Letters · 1998 · 355 citations

Engineering, Materials Engineering, Materials Science +14

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

B.P. Keller, S. Keller, D. Kapolnek et al. · Journal of Electronic Materials · 1995 · 98 citations

Engineering, Materials Engineering, Materials Science +16

Excitation density dependence of photoluminescence in GaN:Mg

Eunsoon Oh, Hyeongsoo Park, Yongjo Park · Applied Physics Letters · 1998 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +11