Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

GaN Growth Using GaN Buffer Layer

Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics · 1991 · 1.3K citations

Engineering, Electrical Engineering, Materials Science +15

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu, Shintaro Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1991 · 296 citations

Engineering, Materials Engineering, Materials Science +12

Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films

W. Rieger, T. Metzger, H. Angerer et al. · Applied Physics Letters · 1996 · 228 citations

Natural Sciences, Materials Engineering, Materials Science +17