Kazuyuki Tadatomo

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi et al. · Japanese Journal of Applied Physics · 2001 · 376 citations

Engineering, Electrical Engineering, Materials Science +17

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

Satoshi Watanabe, Norihide Yamada, Masakazu Nagashima et al. · Applied Physics Letters · 2003 · 290 citations

Natural Sciences, Materials Engineering, Materials Science +14

Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods

Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu et al. · Journal of Applied Physics · 1994 · 289 citations

Engineering, Materials Engineering, Materials Science +17

Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates in<i>r</i>-Plane Patterned Sapphire Substrate

Narihito Okada, Akihiro Kurisu, Kazuma Murakami et al. · Applied Physics Express · 2009 · 87 citations

Engineering, Materials Engineering, Materials Science +17

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Y. Ohuchi et al. · physica status solidi (a) · 2001 · 86 citations

Engineering, Electrical Engineering, Materials Science +17