Youichiro Ohuchi

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi et al. · Japanese Journal of Applied Physics · 2001 · 376 citations

Engineering, Electrical Engineering, Materials Science +17

Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

Hiromitsu Kudo, Kenji Murakami, Ruisheng Zheng et al. · Japanese Journal of Applied Physics · 2002 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of high-efficient InGaN-based violet light-emitting diodes with an external-quantum efficiency of more than 40%

Hiromitsu Kudo, Youichiro Ohuchi, Takahide Jyouichi et al. · physica status solidi (a) · 2003 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectors in the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation

Atsushi Motogaito, Motoo Yamaguchi, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 2001 · 17 citations

Engineering, Chemistry, Electronic Materials +15

High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi et al. · Journal of Light & Visual Environment · 2003 · 11 citations · Full text

Engineering, Electrical Engineering, Materials Science +17