Y. Ohuchi

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Y. Ohuchi et al. · physica status solidi (a) · 2001 · 86 citations

Engineering, Optoelectronic Devices, Electronic Devices +17

Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Atsushi Motogaito, Keiichi Ohta, K. Hiramatsu et al. · physica status solidi (a) · 2001 · 21 citations

Ultraviolet Light, Short Wavelength Optic, Optical Materials +19

Selective Area Growth of GaN by MOVPE and HVPE

K. Hiramatsu, H. Matsushima, T. Shibata et al. · MRS Proceedings · 1997 · 18 citations

Electrical Engineering, Engineering, Applied Physics +3

High performance Schottky UV detectors (265–100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

Hideto Miyake, Hisao Yasukawa, Yoshihiro Kida et al. · physica status solidi (a) · 2003 · 14 citations

Aluminium Nitride, Ultraviolet Light, Short Wavelength Optic +16