H. Matsushima

Selective Area Growth of GaN on Si Substrate Using SiO₂ Mask by Metalorganic Vapor Phase Epitaxy

Yasutoshi Kawaguchi, Yoshio Honda, H. Matsushima et al. · Japanese Journal of Applied Physics · 1998 · 66 citations

Semiconductors, Materials Science, Electrical Engineering +12

Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy

Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone et al. · Japanese Journal of Applied Physics · 1998 · 38 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)

H. Matsushima, Masahito Yamaguchi, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1998 · 20 citations

Materials Engineering, Materials Science, Epitaxial Growth +8

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

Kazumasa Hiramatsu, H. Matsushima, Takumi Shibata et al. · Materials Science and Engineering B · 1999 · 19 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +5

Selective Area Growth of GaN by MOVPE and HVPE

K. Hiramatsu, H. Matsushima, T. Shibata et al. · MRS Proceedings · 1997 · 18 citations

Electrical Engineering, Engineering, Applied Physics +3