Yasutoshi Kawaguchi

Defect structure in selective area growth GaN pyramid on (111)Si substrate

Shigeyasu Tanaka, Yasutoshi Kawaguchi, Nobuhiko Sawaki et al. · Applied Physics Letters · 2000 · 88 citations

Wide-bandgap Semiconductor, Si Substrate, Engineering +16

Selective Area Growth of GaN on Si Substrate Using SiO₂ Mask by Metalorganic Vapor Phase Epitaxy

Yasutoshi Kawaguchi, Yoshio Honda, H. Matsushima et al. · Japanese Journal of Applied Physics · 1998 · 66 citations

Semiconductors, Materials Science, Electrical Engineering +12

The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy

Yasutoshi Kawaguchi, Masaya Shimizu, Masahito Yamaguchi et al. · Journal of Crystal Growth · 1998 · 61 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +6

Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy

Hiroki Sone, Shingo Nambu, Yasutoshi Kawaguchi et al. · Japanese Journal of Applied Physics · 1999 · 60 citations

Materials Science, Wide-bandgap Semiconductor, Epitaxial Growth +13

Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

Masaya Shimizu, Yasutoshi Kawaguchi, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1997 · 53 citations

Materials Science, Materials Engineering, Electrical Engineering +15