Yasutoshi Kawaguchi

Defect structure in selective area growth GaN pyramid on (111)Si substrate

Shigeyasu Tanaka, Yasutoshi Kawaguchi, Nobuhiko Sawaki et al. · Applied Physics Letters · 2000 · 88 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Selective Area Growth of GaN on Si Substrate Using SiO₂ Mask by Metalorganic Vapor Phase Epitaxy

Yasutoshi Kawaguchi, Yoshio Honda, H. Matsushima et al. · Japanese Journal of Applied Physics · 1998 · 66 citations

Engineering, Materials Engineering, Materials Science +17

The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy

Yasutoshi Kawaguchi, Masaya Shimizu, Masahito Yamaguchi et al. · Journal of Crystal Growth · 1998 · 61 citations

Engineering, Materials Engineering, Materials Science +17

Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy

Hiroki Sone, Shingo Nambu, Yasutoshi Kawaguchi et al. · Japanese Journal of Applied Physics · 1999 · 60 citations

Engineering, Materials Engineering, Materials Science +17

Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

Masaya Shimizu, Yasutoshi Kawaguchi, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1997 · 54 citations

Engineering, Materials Engineering, Materials Science +15