The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy - Concepedia

Concepedia

Publication | Closed Access

The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy

61

Citations

7

References

1998

Year

Yasutoshi Kawaguchi, Masaya Shimizu, Masahito Yamaguchi, Kazumasa Hiramatsu, Nobuhiko Sawaki, Wataru Taki, H. Tsuda, Noriyuki Kuwano, K. Oki, Tsvetanka Zheleva,

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorEngineeringCrystalline DefectsApplied PhysicsGan Power DeviceGallium OxideCrystal Growth MechanismGa1−n/gan Heterostructure

References

	Year	Citations

Page 1

Page 1