Masaya Shimizu - Concepedia

Author

Masaya Shimizu

Also Known As

Masaya SHIMIZU, Masaya Shimizu, Shimizu, Masaya

Publications

285

Citations

H-Index

Concepts

All Affiliations

Masaya Shimizu is an author at Nagoya University specializing in applied physics, materials science, and engineering.

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	261
2	Applied Physics	5	5	261
3	Materials Science	5	5	261
4	Materials Engineering	3	3	143
5	Electrical Engineering	2	2	102

Masaya Shimizu

Publications

261

Citations

H-Index

Page 1

	Year	Citations
The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy Yasutoshi Kawaguchi, Masaya Shimizu, Masahito Yamaguchi, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringCrystalline DefectsApplied Physics	1998	61
Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets Masaya Shimizu, Kazumasa Hiramatsu, Nobuhiko Sawaki Journal of Crystal Growth Materials ScienceEngineeringSurface ScienceApplied PhysicsIndium Droplets	1994	57
Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate Masaya Shimizu, Yasutoshi Kawaguchi, Kazumasa Hiramatsu, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringThick Ingan FilmsEngineering	1997	53
The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE Yasutoshi Kawaguchi, Masaya Shimizu, Kazumasa Hiramatsu, MRS Proceedings Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	1996	49
MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer Masaya Shimizu, Yasutoshi Kawaguchi, Kazumasa Hiramatsu, Solid-State Electronics Materials EngineeringMaterials ScienceAluminium NitrideWide-bandgap SemiconductorThick Homogeneous Ingan	1997	41

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