Masaya Shimizu

The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy

Yasutoshi Kawaguchi, Masaya Shimizu, Masahito Yamaguchi et al. · Journal of Crystal Growth · 1998 · 61 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +6

Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets

Masaya Shimizu, Kazumasa Hiramatsu, Nobuhiko Sawaki · Journal of Crystal Growth · 1994 · 57 citations

Materials Science, Engineering, Surface Science +5

Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

Masaya Shimizu, Yasutoshi Kawaguchi, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1997 · 53 citations

Materials Science, Materials Engineering, Electrical Engineering +15

The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

Yasutoshi Kawaguchi, Masaya Shimizu, Kazumasa Hiramatsu et al. · MRS Proceedings · 1996 · 49 citations

Materials Science, Materials Engineering, Electrical Engineering +8

MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer

Masaya Shimizu, Yasutoshi Kawaguchi, Kazumasa Hiramatsu et al. · Solid-State Electronics · 1997 · 41 citations

Materials Engineering, Materials Science, Aluminium Nitride +11