Publication | Closed Access
Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets
57
Citations
6
References
1994
Year
Materials ScienceEngineeringSurface ScienceApplied PhysicsIndium DropletsAluminum Gallium NitrideGan Power DeviceMolecular Beam Epitaxy
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