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MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer

Materials EngineeringMaterials ScienceAluminium NitrideWide-bandgap SemiconductorThick Homogeneous InganEngineeringAln Buffer LayerSurface ScienceApplied PhysicsAluminum Gallium NitrideMovpe GrowthGallium OxideCategoryiii-v SemiconductorOptoelectronics