The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE - Concepedia

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The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

49

Citations

4

References

1996

Year

Yasutoshi Kawaguchi, Masaya Shimizu, Kazumasa Hiramatsu, Nobuhiko Sawaki

MRS Proceedings

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceComposition Pulling EffectOptoelectronicsIngan Growth

References

	Year	Citations

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