Japanese Journal of Applied Physics · 1999 · 60 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsEpitaxial GrowthIii-v SemiconductorsSemiconductor Crystal GrowthWide Band Gap SemiconductorsWide-bandgap SemiconductorsX-ray SpectroscopyCathodoluminescence MicroscopyCrystalline StructureEpitaxial Growth Of Wide-bandgap SemiconductorsEpitaxial Lateral OvergrowthEpitaxial MaterialsGallium Nitride (Gan) MaterialsHydride Vapor Phase EpitaxyStripe Patterns
The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hydride vapor phase epitaxy (HVPE) and a buried structure of the W mask with a smooth surface is achieved for the stripe mask patterns of <1120> and <1100> direction. Optical and crystalline characteristics of the ELO-GaN are investigated by means of cathodoluminescence (CL) imaging and X-ray rocking curves (XRCs). It is found that the CL intensity at 133 K due to the near-band edge emission is stronger in the laterally overgrown region in comparison with that in the normal growth region. The φ-ω scan of XRCs reveals that the tilting of the c -axis is much smaller in the ELO-GaN grown with the W mask than that grown with an SiO 2 mask.
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High Al-content AlGaN/GaN MODFETs for ultrahigh performance
Yifeng Wu, B.P. Keller, P. Fini et al. · IEEE Electron Device Letters · 1998 · 280 citations