T. Shibata

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

F. Bertram, T. Riemann, J. Christen et al. · Applied Physics Letters · 1999 · 142 citations

Semiconductors, Materials Science, Strong Impurity Incorporation +14

Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN

A. Kaschner, A. Hoffmann, C. Thomsen et al. · Applied Physics Letters · 1999 · 54 citations

Materials Science, Wide-bandgap Semiconductor, Structural Properties +15

200V Super Junction MOSFET Fabricated by High Aspect Ratio Trench Filling

S. Yamauchi, T. Shibata, Shoji Nogami et al. · 2006 · 43 citations

Super Junction, Anisotropic Epitaxial Growth, Electrical Engineering +9

The EUSO-Balloon pathfinder

J. H. Adams, S. Ahmad, J. -N. Albert et al. · Experimental Astronomy · 2015 · 39 citations · Full text

Space Mission, Engineering, Computational Model +5

Oxidation Behaviour of Ti<sub>5</sub>Si<sub>3</sub> at Temperatures between 1400 and 1700 K

Shunsuke Taniguchi, Tsuyoshi Minamida, T. Shibata · Materials science forum · 1997 · 18 citations

Materials Engineering, Materials Science, High Temperature Materials +13