2006 · 44 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesIntegrated Circuit DesignWide Band Gap SemiconductorsAnisotropic GrowthBreakdown VoltageCarrier GasesEpitaxial Film GrowthFabricationHigh-voltage BreakdownVariable Aspect Ratio
In this paper, a new filling process using an anisotropic epitaxial growth was proposed as the fabrication method of a Super Junction (SJ) MOSFET. The anisotropic growth controlled with silicon (Si) and chlorine (Cl) source gases was applied to filling of the high-aspect-ratio trenches without voids. Using the process we succeeded in filling trenches with aspect ratio of 18, which is the highest aspect ratio works previously reported, and we fabricated a 200V SJ-MOSFET with a 2.7gm pitch trench gate structure. Consequently, the MOSFET showed electrical characteristics of the lowest on-resistance of 1.5 m-ohm-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a breakdown voltage of 225V.
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A new generation of high voltage MOSFETs breaks the limit line of silicon
Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 402 citations
Engineering, Electrical Engineering, Electronic Materials +13
200V multi RESURF trench MOSFET (MR-TMOS)
T. Kurosaki, Hideaki Shishido, Masahiro Kitada et al. · 2004 · 30 citations