Akihiro Kurisu

Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates in<i>r</i>-Plane Patterned Sapphire Substrate

Narihito Okada, Akihiro Kurisu, Kazuma Murakami et al. · Applied Physics Express · 2009 · 87 citations

Engineering, Materials Engineering, Materials Science +17

Growth of semipolar {10$ \bar 1 $1} GaN from <i>c</i> ‐plane‐like sapphire sidewall of patterned <i>n</i> ‐plane sapphire substrate

Masaki Takami, Akihiro Kurisu, Y. Abe et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 15 citations

Engineering, Materials Engineering, Materials Science +17

Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates

Narihito Okada, Hiroyasu Oshita, Akihiro Kurisu et al. · Japanese Journal of Applied Physics · 2011 · 11 citations

Engineering, Materials Engineering, Materials Science +17