Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 15 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsAtomic Force Microscopy AnalysisDiffraction AnalysisEpitaxial Growth MorphologyEpitaxial Growth Of Wide-bandgap SemiconductorsGallium NitrideMetalorganic Vapor Phase EpitaxySurface GrowthX-ray Diffraction Analysis
Abstract The direct growth of semipolar {10 $ \bar 1 $ 1} GaN via metalorganic vapor phase epitaxy has been demonstrated using a patterned n ‐plane sapphire substrate with a c ‐plane‐like sidewall and terrace covered with a SiO 2 mask. From X‐ray diffraction analysis, it was clear that a uniformly oriented {10 $ \bar 1 $ 1} GaN layer was obtained. Scanning electron microscopy and atomic force microscopy measurements showed a flat surface morphology. The root‐mean‐square value of the {10 $ \bar 1 $ 1} GaN layer is 0.7 nm over a 5 × 5 μm 2 area. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)