Concepedia
Statistics
Publications
9
Citations
306
H-Index
Active since
2000
Affiliations
The University of Tokyo(Current)
Tokyo University of Science
Japan Science and Technology Agency
Hokkaido University
Yamaguchi University
K. Hoshino is an author at The University of Tokyo specializing in materials science, semiconductor materials, and electronic materials.
Publications per year
2000–2008
Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots
Satoshi Kako, Miharu Miyamura, Kota Tachibana et al. · Applied Physics Letters · 2003 · 80 citations
Natural Sciences, Materials Science, Physics +16
Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
K. Hoshino, Satoshi Kako, Yasuhiko Arakawa · Applied Physics Letters · 2004 · 46 citations
Natural Sciences, Materials Engineering, Materials Science +17
Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures
Ning Tang, Bo Shen, Zhongming Zheng et al. · Journal of Applied Physics · 2003 · 34 citations
Natural Sciences, Materials Science, Physics +17
Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition
Takao Someya, K. Hoshino, Yasuhiko Arakawa · Applied Physics Letters · 2001 · 34 citations
Engineering, Materials Engineering, Materials Science +17
Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE
K. Hoshino, N. Yanagita, Masahiko Araki et al. · Journal of Crystal Growth · 2006 · 28 citations
Engineering, Materials Engineering, Materials Science +16
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