DC Compact Model for SOI Tunnel Field-Effect Transistors

Concepts

EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportDevice ModelingDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsCompact Model Parameter ExtractionField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingQuantum Tunneling EffectsThreshold Voltage ModelingTunneling Field-effect Transistors

Abstract

A physics-based dc compact model for SOI tunnel field-effect transistors (TFETs) has been developed in this paper utilizing Landauer approach. The important transistor electrical parameters, i.e., threshold voltage V th , charge in the channel Q , gate capacitance C G , drain current I DS , subthreshold swing S , transconductance g m , and output conductance g DS , have been modeled. The model predicts the low subthreshold swing values (less than 60 mV/dec) observed in TFETs and shows a good match with the technology computer aided design (TCAD) results. Model validation was carried out using TCAD simulation for different TFET structures with abrupt junctions, i.e., 40-nm Si nTFET and pTFET, a 0.4-μm Si nTFET, and a 40-nm Ge nTFET. The compact model predictions are in good agreement with the TCAD simulation results.

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