Si tunnel transistors with a novel silicided source and 46mV/dec swing

Kanghoon Jeon, Wei-Yip Loh, Pratik Patel, +11

SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +11

Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices

Goutam Kumar Dalapati, Yi Tong, Wei-Yip Loh, +2

IEEE Transactions on Electron Devices

SemiconductorsMaterials ScienceElectrical EngineeringOxide HeterostructuresGate Dielectrics +13

Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

Brian E. Coss, Casey Smith, Wei-Yip Loh, +4

IEEE Electron Device Letters

Electrical EngineeringContact Resistance ReductionEngineeringControl WaferNanoelectronics +8

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)

Se‐Hoon Lee, Prashant Majhi, Jungwoo Oh, +14

IEEE Electron Device Letters

SemiconductorsHeterostructure QuantumElectrical EngineeringShort Gate LengthEngineering +10

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

Wei-Yip Loh, H. Etienne, Brian E. Coss, +12

IEEE Electron Device Letters

Materials EngineeringChlorine SegregatesIon ImplantationSchottky Barrier HeightEngineering +8

Mapping Defect Density in MBE Grown <inline-formula> <tex-math notation="TeX">${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ </tex-math></inline-formula> Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

Kausik Majumdar, Paul M. Thomas, Wei-Yip Loh, +10

IEEE Transactions on Electron Devices

EngineeringIntegrated CircuitsExcess Defect DensityDefect ToleranceSemiconductors +14

Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing $ \hbox{Ni}_{0.95}\hbox{Pd}_{0.05}$ Alloy

Yingying Zhang, Jungwoo Oh, In‐Shik Han, +11

IEEE Transactions on Electron Devices

Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesGe Mosfets +13

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

Xinpeng Wang, Andy Eu-Jin Lim, H.Y. Yu, +10

IEEE Transactions on Electron Devices

Aluminium NitrideEngineeringSolid-state ChemistryGate DielectricSemiconductor Device +15

Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping

Kenneth R. Kort, P. Y. Hung, Patrick D. Lysaght, +3

Physical Chemistry Chemical Physics

Sub-60nm Si tunnel field effect transistors with I<inf>on</inf> >100 µA/µm

Wei-Yip Loh, Kanghoon Jeon, Chang Yong Kang, +10

Device ModelingBand-to-band TunnelingElectrical EngineeringEngineeringTunneling Microscopy +7