Can the subthreshold swing in a classical FET be lowered below 60 mV/decade?

Abstract

We show that by biasing a ferroelectric insulator in its negative capacitance region and using it on top of the gate of a classical FET, it should be possible to achieve a subthreshold swing significantly lower than 60 mV/decade at room temperature. We further show that this, in principle, does not change the transport properties of the FET so that the ON current of the FET remains unaffected. A simple analysis is used to describe the basic principle of device operation.