Subthreshold Swing Analysis
Subthreshold Swing Analysis is a characterization method that quantifies the inverse of the subthreshold slope in a transistor's transfer characteristic, distinguishing itself by evaluating the abruptness of the gate voltage-induced transition from the off-state to the on-state in order to assess the switching efficiency and interface quality of semiconductor devices.
148
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6.5K
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521
Authors
164
Institutions
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2017–2026
55
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148
Ultimately thin double-gate SOI MOSFETs
T. Ernst, S. Cristoloveanu, G. Ghibaudo et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations
Sanjay Kumar, Ekta Goel, Kunal Singh et al. · IEEE Transactions on Electron Devices · 2017 · 182 citations
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Centre National de la Recherche Scientifique
Paris, France
8 h-index
17 publications
1.6K citations

Banaras Hindu University
Varanasi, India
7 h-index
26 publications
1.7K citations

Xidian University
Xi'an, China
7 h-index
46 publications
1.8K citations
Fudan University
Shanghai, China
7 h-index
30 publications
1.5K citations
Institut polytechnique de Grenoble
Grenoble, France
7 h-index
18 publications
919 citations
Institut de Microélectronique, Electromagnétisme et Photonique
Grenoble, France
6 h-index
14 publications
1.3K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
5 h-index
11 publications
1.1K citations
CEA Grenoble
Grenoble, France
5 h-index
9 publications
489 citations
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29 publications · 2.2K citations
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16 publications · 817 citations
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8 publications · 282 citations
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7 publications · 316 citations
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