Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET

On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors

J. Frenkel · Physical Review · 1938 · 2K citations

Natural Sciences, Materials Science, Physics +14

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin et al. · IEEE Transactions on Nuclear Science · 1994 · 283 citations

Engineering, Diagnostic Sciences, Radiation Measurement +15

Physical model for enhanced interface-trap formation at low dose rates

Sergey N. Rashkeev, C.R. Cirba, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2002 · 196 citations

Engineering, Electrical Engineering, Materials Science +17

Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

Daniel M. Fleetwood, L.C. Riewe, J.R. Schwank et al. · IEEE Transactions on Nuclear Science · 1996 · 173 citations

Medicine, Electrical Engineering, Radiation Dosimetry +12

An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors

C. M. Dozier, Daniel M. Fleetwood, D. B. Brown et al. · IEEE Transactions on Nuclear Science · 1987 · 129 citations

Engineering, Electrical Engineering, Materials Science +12