Antoine Touboul - Concepedia

Author

Antoine Touboul

Also Known As

A. D Touboul, A. D. Touboul, A. Touboul, A.D. Touboul, Antoine D. Touboul, Antoine Touboul, Touboul, A. D., Touboul, Antoine, Wrobel, Frédéric

136

Publications

912

Citations

H-Index

Concepts

All Affiliations

Université de Montpellier Centre National de la Recherche Scientifique Institut d'Électronique et des Systèmes Centre National d'Études Spatiales Vanderbilt University

About

Antoine Touboul is an author at Université de Montpellier specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	31	659
2	Applied Physics	14	17	402
3	Natural Sciences	4	4	116
4	Medicine	3	3	70
5	Health Sciences	2	2	43

Antoine Touboul

Publications

714

Citations

H-Index

Page 1

	Year	Citations
Dose rate effects in bipolar oxides: Competition between trap filling and recombination J. Boch, Frédéric Saigné, Antoine Touboul, Applied Physics Letters EngineeringRadiation EffectBipolar TechnologiesRadiation ExposureChemistry	2006	58
Determining Realistic Parameters for the <newline/> Double Exponential Law that Models<newline/> Transient Current Pulses F. Wrobel, Luigi Dilillo, Antoine Touboul, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringSingle Event UpsetEngineeringPhysics	2014	56
The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices J. Boch, Y. Gonzalez Velo, Frédéric Saigné, IEEE Transactions on Nuclear Science Electrical EngineeringRadiation TestingEngineeringRadiation DetectionBipolar Devices	2009	33
Testing a Commercial MRAM Under Neutron and Alpha Radiation in Dynamic Mode Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, IEEE Transactions on Nuclear Science Commercial MramNon-volatile MemoryDynamic ModeEngineeringNuclear Physics	2013	32
Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions S. Kuboyama, Eiichi Mizuta, Yuki Nakada, IEEE Transactions on Nuclear Science Materials EngineeringDevice SimulatorElectrical EngineeringSchottky Barrier ContactEngineering	2019	31
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET K. Niskanen, Antoine Touboul, Rosine Coq Germanicus, IEEE Transactions on Nuclear Science Electrical EngineeringReliability EngineeringEngineeringPower DeviceBias Temperature Instability	2020	30
Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment K. Niskanen, Rosine Coq Germanicus, A. Michez, IEEE Transactions on Nuclear Science EngineeringSic Power MosfetsPower ElectronicsReverse Gate VoltageNanoelectronics	2021	30
Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation A. M. J. F. Carvalho, M. Marinoni, Antoine Touboul, Applied Physics Letters EngineeringSilicon OxideVacuum DeviceSilicon On InsulatorThin Silicon	2007	29
Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation Andrea Coronetti, Rubén García Alía, Jan Budroweit, IEEE Transactions on Nuclear Science Risk AcceptanceEngineeringTest PreparationHardware Verification LanguageRadiation Hardness Assurance	2021	28
Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories F. Wrobel, J. Gasiot, Frédéric Saigné, Applied Physics Letters Non-volatile MemoryEngineeringAdvanced Microelectronic MemoriesMemory DeviceNatural Radioactive Isotopes	2008	23

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