Antoine Touboul

Dose rate effects in bipolar oxides: Competition between trap filling and recombination

J. Boch, Frédéric Saigné, Antoine Touboul et al. · Applied Physics Letters · 2006 · 58 citations

Engineering, Radiation Effect, Bipolar Technologies +18

Determining Realistic Parameters for the <newline/> Double Exponential Law that Models<newline/> Transient Current Pulses

F. Wrobel, Luigi Dilillo, Antoine Touboul et al. · IEEE Transactions on Nuclear Science · 2014 · 56 citations

Device Modeling, Electrical Engineering, Single Event Upset +15

The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices

J. Boch, Y. Gonzalez Velo, Frédéric Saigné et al. · IEEE Transactions on Nuclear Science · 2009 · 33 citations

Electrical Engineering, Radiation Testing, Engineering +12

Testing a Commercial MRAM Under Neutron and Alpha Radiation in Dynamic Mode

Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio et al. · IEEE Transactions on Nuclear Science · 2013 · 32 citations

Commercial Mram, Non-volatile Memory, Dynamic Mode +22

Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

S. Kuboyama, Eiichi Mizuta, Yuki Nakada et al. · IEEE Transactions on Nuclear Science · 2019 · 31 citations

Materials Engineering, Device Simulator, Electrical Engineering +13