J. Boch

Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

T. Mérelle, H. Chabane, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 2005 · 73 citations

Engineering, Seu Occurrence, Ion Implantation +18

Physical Model for the Low-Dose-Rate Effect in Bipolar Devices

J. Boch, Frédéric Saigné, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2006 · 69 citations

Device Modeling, Electrical Engineering, Bipolar Devices +12

Dose rate effects in bipolar oxides: Competition between trap filling and recombination

J. Boch, Frédéric Saigné, Antoine Touboul et al. · Applied Physics Letters · 2006 · 58 citations

Engineering, Radiation Effect, Bipolar Technologies +18

Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments

J. Boch, F. Saigne, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2005 · 44 citations

Electrical Engineering, Low-dose-rate Irradiation, Engineering +14

Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

V. Correas, F. Saigne, B. Sagnes et al. · IEEE Transactions on Nuclear Science · 2009 · 41 citations

Electrical Engineering, Ion Implantation, Engineering +11