B. Sagnes

Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions

J.M. Palau, G. Hubert, K. Coulié et al. · IEEE Transactions on Nuclear Science · 2001 · 125 citations

Engineering, Computer Engineering, Electrical Engineering +14

Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

T. Mérelle, H. Chabane, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 2005 · 74 citations

Engineering, Computer Engineering, Electrical Engineering +17

Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments

Damien Lambert, J. Baggio, V. Ferlet-Cavrois et al. · IEEE Transactions on Nuclear Science · 2004 · 47 citations

Engineering, Electrical Engineering, Nuclear Engineering +13

Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

T. Mérelle, Frédéric Saigné, B. Sagnes et al. · IEEE Transactions on Nuclear Science · 2005 · 45 citations

Engineering, Computer Engineering, Electrical Engineering +11

Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

V. Correas, F. Saigne, B. Sagnes et al. · IEEE Transactions on Nuclear Science · 2009 · 41 citations

Engineering, Computer Engineering, Electrical Engineering +15