S. Kuboyama

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

Eiichi Mizuta, S. Kuboyama, Hiroshi Abe et al. · IEEE Transactions on Nuclear Science · 2014 · 157 citations · Full text

Engineering, Electrical Engineering, Power Electronics +16

Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

S. Kuboyama, Akifumi Maru, H. Shindou et al. · IEEE Transactions on Nuclear Science · 2011 · 112 citations

Engineering, Electrical Engineering, Materials Science +17

Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

S. Kuboyama, Chihiro Kamezawa, Naomi Ikeda et al. · IEEE Transactions on Nuclear Science · 2006 · 103 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

Eiichi Mizuta, S. Kuboyama, Yuki Nakada et al. · IEEE Transactions on Nuclear Science · 2018 · 81 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Mechanism for single-event burnout of power MOSFETs and its characterization technique

S. Kuboyama, Sumio Matsuda, Tooru Kanno et al. · IEEE Transactions on Nuclear Science · 1992 · 69 citations

Engineering, Electrical Engineering, Microelectronics +14