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Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout
101
Citations
8
References
2006
Year
Semiconductor TechnologyElectrical EngineeringEngineeringPhysicsPower DeviceApplied PhysicsPower Semiconductor DeviceSingle-event BurnoutHeavy Ion IrradiationResulting Permanent DamageMicroelectronicsCurrent Sustaining MechanismPermanent DamageAnomalous Charge CollectionSemiconductor Device
It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation
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