IEEE Transactions on Nuclear Science · 2006 · 101 citations · 8 references
Semiconductor TechnologyElectrical EngineeringEngineeringPhysicsPower DeviceApplied PhysicsPower Semiconductor DeviceSingle-event BurnoutHeavy Ion IrradiationResulting Permanent DamageMicroelectronicsCurrent Sustaining MechanismPermanent DamageAnomalous Charge CollectionSemiconductor Device
It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation
8
Ionization rates and critical fields in 4H silicon carbide
Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Applied Physics Letters · 1997 · 397 citations
Electrical Engineering, Epitaxial P-n Diodes, Engineering +13