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Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

101

Citations

8

References

2006

Year

Abstract

It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation

References

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