H. Ohyama - Concepedia

Author

H. Ohyama

National Institute of Technology, Kumamoto College

Also Known As

H Ohyama, H. Ohyama, Hidenori Ohyama

217

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

National Institute of Technology, Kumamoto College IMEC KU Leuven Advanced Science Research Center National and Kapodistrian University of Athens

About

H. Ohyama is an author at National Institute of Technology, Kumamoto College specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	38	921
2	Applied Physics	20	39	937
3	Electrical Engineering	18	23	588
4	Chemistry	5	5	113
5	Natural Sciences	4	4	101

H. Ohyama

Publications

948

Citations

H-Index

Page 1

	Year	Citations
Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout S. Kuboyama, Chihiro Kamezawa, Naomi Ikeda, IEEE Transactions on Nuclear Science Semiconductor TechnologyElectrical EngineeringEngineeringPhysicsPower Device	2006	101
Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons S. Kuboyama, Chihiro Kamezawa, Yohei Satoh, IEEE Transactions on Nuclear Science Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsBias Temperature Instability	2007	68
Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements Kenichiro Takakura, Daiki Koga, H. Ohyama, Physica B Condensed Matter Materials ScienceCrystalline QualityOptical Absorption MeasurementsOptical MaterialsEngineering	2009	53
Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium C. A. Londos, A. Andrianakis, V. V. Emtsev, Semiconductor Science and Technology Materials ScienceSemiconductorsEngineeringPhysicsCrystalline Defects	2009	38
Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons H. Ohyama, Jan Vanhellemont, Y. Takami, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringPhysicsNanoelectronicsElectron Capture Levels	1995	32
Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing C. A. Londos, A. Andrianakis, V. V. Emtsev, Journal of Applied Physics EngineeringCrystal Growth TechnologyCm−1 BandCm−1 BandsSilicon On Insulator	2009	30
IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon C. A. Londos, A. Andrianakis, E. N. Sgourou, Journal of Applied Physics EngineeringVon DefectsConversion EfficiencyChemistryIr Studies	2011	29
Germanium content dependence of radiation damage in strained Si/sub 1-x/Ge/sub x/ epitaxial devices H. Ohyama, Jan Vanhellemont, Y. Takami, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringPhysicsGermanium Content DependenceFast Neutrons	1994	28
2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics J.M. Rafı́, F. Campabadal, H. Ohyama, Solid-State Electronics Materials ScienceElectrical CharacteristicsElectrical EngineeringIon ImplantationEngineering	2012	26
Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si Kenichiro Takakura, Suguru Funasaki, Isao Tsunoda, Physica B Condensed Matter Oxide HeterostructuresMaterials ScienceEngineeringOxide ElectronicsSurface Science	2011	26

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