H. Ohyama

Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

S. Kuboyama, Chihiro Kamezawa, Naomi Ikeda et al. · IEEE Transactions on Nuclear Science · 2006 · 101 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

S. Kuboyama, Chihiro Kamezawa, Yohei Satoh et al. · IEEE Transactions on Nuclear Science · 2007 · 68 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

Kenichiro Takakura, Daiki Koga, H. Ohyama et al. · Physica B Condensed Matter · 2009 · 53 citations

Materials Science, Crystalline Quality, Optical Absorption Measurements +9

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

C. A. Londos, A. Andrianakis, V. V. Emtsev et al. · Semiconductor Science and Technology · 2009 · 38 citations

Materials Science, Semiconductors, Engineering +13

Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons

H. Ohyama, Jan Vanhellemont, Y. Takami et al. · IEEE Transactions on Nuclear Science · 1995 · 32 citations

Electrical Engineering, Engineering, Physics +10