Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

Abstract

It was demonstrated that single-event burnout was observed in silicon carbide Schottky barrier diodes with high energy proton irradiation. The behavior was successfully explained using a failure density function based on the geometric distribution. Responsible spallation fragments to trigger the single-event burnout were identified by Geant4 simulations.