Mechanism for single-event burnout of power MOSFETs and its characterization technique

Abstract

A novel characterization technique for single event burnout (SEB) of power MOSFETs was developed. The technique is based on a pulse-height analyzer system for charge collection measurement with a modified charge-sensitive amplifier which has a very wide dynamic range. The data obtained by this technique give detailed information about the SEB mechanism of power MOSFETs. The experimental data suggested a position-independent charge collection mechanism along an ion track, and a new parameter for SEB hardness was proposed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>