H. Shindou

Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID

Daisuke Kobayashi, Kazuyuki Hirose, Keita Sakamoto et al. · IEEE Transactions on Nuclear Science · 2019 · 207 citations

Non-volatile Memory, Engineering, Radiation Physics +22

Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

S. Kuboyama, Akifumi Maru, H. Shindou et al. · IEEE Transactions on Nuclear Science · 2011 · 106 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

A. Makihara, M. Midorikawa, Tatsuya Yamaguchi et al. · IEEE Transactions on Nuclear Science · 2005 · 52 citations

Hardware Security, Low-power Electronics, Electrical Engineering +14

Analysis of single-ion multiple-bit upset in high-density DRAMs

A. Makihara, H. Shindou, Norio Nemoto et al. · IEEE Transactions on Nuclear Science · 2000 · 48 citations

Electrical Engineering, Engineering, Physics +10

Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

S. Kuboyama, Eiichi Mizuta, Yuki Nakada et al. · IEEE Transactions on Nuclear Science · 2019 · 31 citations

Materials Engineering, Device Simulator, Electrical Engineering +13