R. Ecoffet - Concepedia

Author

R. Ecoffet

Centre National d'Études Spatiales

Also Known As

Ecoffet, R., Gasiot, J, J.P. David, R. Ecoffet

192

Publications

2.8K

Citations

H-Index

153

Concepts

All Affiliations

Centre National d'Études Spatiales Office National d'Études et de Recherches Aérospatiales Université de Montpellier Centre d'Étude et de Recherche Travail Organisation Pouvoir Techniques of Informatics and Microelectronics for Integrated Systems Architecture

About

R. Ecoffet is an author at Centre National d'Études Spatiales specializing in engineering, electrical engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	77	2.4K
2	Natural Sciences	14	18	554
3	Medicine	6	6	170
4	Education	5	5	129
5	Health Sciences	1	1	23

R. Ecoffet

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations Ph. Roche, J.M. Palau, G. Bruguier, IEEE Transactions on Nuclear Science Non-volatile MemoryEngineeringVlsi DesignCritical ChargeComputer Architecture	1999	135
Predicting error rate for microprocessor-based digital architectures through C.E.U. (Code Emulating Upsets) injection R. Velazco, S. Rezgui, R. Ecoffet IEEE Transactions on Nuclear Science EngineeringError Control TechniqueComputer ArchitectureSoftware EngineeringProcessor Architecture	2000	131
An empirical model for predicting proton induced upset P. Calvel, C. Barillot, P. Lamothe, IEEE Transactions on Nuclear Science Single Event UpsetHeavy Ion PhysicEngineeringEmpirical ModelPhysics	1996	113
Observation of heavy ion induced transients in linear circuits R. Ecoffet, S. Duzellier, P. Tastet, Electrical EngineeringEngineeringPhysicsHeavy IonAtomic Physics	2005	84
Two CMOS memory cells suitable for the design of SEU-tolerant VLSI circuits Raoul Velazco, D. Bessot, S. Duzellier, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringVlsi DesignCmos Memory CellsSeu-tolerant Vlsi Circuits	1994	80
SEU critical charge and sensitive area in a submicron CMOS technology C. Detcheverry, C. Dachs, E. Lorfèvre, IEEE Transactions on Nuclear Science Low-power ElectronicsNon-volatile MemoryElectrical EngineeringParasitic Bipolar ActionVlsi Design	1997	79
Overview of In-Orbit Radiation Induced Spacecraft Anomalies R. Ecoffet IEEE Transactions on Nuclear Science GeophysicsOn-board AnomaliesSpacecraft AnomaliesReliability EngineeringAnomaly Detection	2013	78
In-flight observations of the radiation environment and its effects on devices in the SAC-C polar orbit D. Falguère, D. Boscher, Thierry Nuns, IEEE Transactions on Nuclear Science Single Event EffectOrbit DeterminationSolar VariabilityEngineeringSolar Energetic Particle	2002	67
SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain Ph. Roche, J.M. Palau, K. Belhaddad, IEEE Transactions on Nuclear Science Non-volatile MemoryEngineeringVlsi DesignFirst Seu ResponseInterconnect (Integrated Circuits)	1998	55
Heavy ion induced single hard errors on submicronic memories (for space application) Christian Dufour, Philippe Garnier, T. Carrière, IEEE Transactions on Nuclear Science Radiation-induced Hard ErrorsEngineeringNuclear PhysicsEmerging Memory TechnologyMem Testing	1992	49

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