R. Ecoffet

Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

Ph. Roche, J.M. Palau, G. Bruguier et al. · IEEE Transactions on Nuclear Science · 1999 · 135 citations

Non-volatile Memory, Engineering, Vlsi Design +18

Predicting error rate for microprocessor-based digital architectures through C.E.U. (Code Emulating Upsets) injection

R. Velazco, S. Rezgui, R. Ecoffet · IEEE Transactions on Nuclear Science · 2000 · 131 citations

Engineering, Error Control Technique, Computer Architecture +21

An empirical model for predicting proton induced upset

P. Calvel, C. Barillot, P. Lamothe et al. · IEEE Transactions on Nuclear Science · 1996 · 113 citations

Single Event Upset, Heavy Ion Physic, Engineering +11

Observation of heavy ion induced transients in linear circuits

R. Ecoffet, S. Duzellier, P. Tastet et al. · 2005 · 84 citations

Electrical Engineering, Engineering, Physics +11

Two CMOS memory cells suitable for the design of SEU-tolerant VLSI circuits

Raoul Velazco, D. Bessot, S. Duzellier et al. · IEEE Transactions on Nuclear Science · 1994 · 80 citations

Electrical Engineering, Engineering, Vlsi Design +15