Concepedia

P. Tastet

PT

9

Publications

310

Citations

9

H-Index

1985

Active since

Affiliations

Centre National d'Études Spatiales(Current)

Arianespace (France)

Institut d'Électronique et des Systèmes

P. Tastet is an author at Centre National d'Études Spatiales specializing in engineering, electrical engineering, and microelectronics.

Top concepts

EngineeringElectrical EngineeringMicroelectronicsDevice ModelingSingle Event EffectsPower ElectronicsHigh Voltage EngineeringPhysicsPulse PowerElectrophysiology

Publications per year

1985–2005

9

Publications

9

Observation of heavy ion induced transients in linear circuits

R. Ecoffet, S. Duzellier, P. Tastet et al. · 2005 · 84 citations

Electrical Engineering, Engineering, Physics +11

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

C. Dachs, F. Roubaud, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 1994 · 59 citations

Device Modeling, Electrical Engineering, Impact Position Effect +13

Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

F. Roubaud, C. Dachs, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 1993 · 55 citations

Engineering, Power Electronics, High Voltage Engineering +20

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

C. Dachs, F. Roubaud, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 1995 · 40 citations

Engineering, Power Optimization (Eda), Power Electronics +17

Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]

I. Mouret, M.-C. Calvet, P. Calvel et al. · IEEE Transactions on Nuclear Science · 1996 · 20 citations

Device Modeling, Electrical Engineering, Engineering +11

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