P. Calvel

Analysis of single-event transients in analog circuits

Philippe C. Adell, Ronald D. Schrimpf, Hugh Barnaby et al. · IEEE Transactions on Nuclear Science · 2000 · 148 citations

Electrical Engineering, Experimental Data, Engineering +11

An empirical model for predicting proton induced upset

P. Calvel, C. Barillot, P. Lamothe et al. · IEEE Transactions on Nuclear Science · 1996 · 113 citations

Single Event Upset, Heavy Ion Physic, Engineering +11

Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

D. Župac, K.F. Galloway, P. Khosropour et al. · IEEE Transactions on Nuclear Science · 1993 · 61 citations

Electrical Engineering, Engineering, Physics +14

Temperature and angular dependence of substrate response in SEGR [power MOSFET]

I. Mouret, M. Allenspach, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 1994 · 42 citations

Semiconductor Technology, Electrical Engineering, Power Mosfet +12

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

C. Dachs, F. Roubaud, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 1995 · 40 citations

Engineering, Power Optimization (Eda), Power Electronics +17