M. Allenspach

A conceptual model of a single-event gate-rupture in power MOSFETs

J.R. Brews, M. Allenspach, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 1993 · 92 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

SEGR and SEB in n-channel power MOSFETs

M. Allenspach, C. Dachs, G.H. Johnson et al. · IEEE Transactions on Nuclear Science · 1996 · 91 citations

Engineering, Electrical Engineering, Electronic Materials +16

Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

J.L. Titus, C.F. Wheatley, D.I. Burton et al. · IEEE Transactions on Nuclear Science · 1995 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence

M. Allenspach, I. Mouret, J.L. Titus et al. · IEEE Transactions on Nuclear Science · 1995 · 71 citations

Engineering, Electrical Engineering, Microelectronics +16

Evaluation of SEGR threshold in power MOSFETs

M. Allenspach, J.R. Brews, I. Mouret et al. · IEEE Transactions on Nuclear Science · 1994 · 63 citations

Engineering, Electrical Engineering, Microelectronics +15