G.H. Johnson

Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs

D. Schmidt, Daniel M. Fleetwood, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 1995 · 118 citations

Electrical Engineering, Engineering, Rf Semiconductor +13

Simulating single-event burnout of n-channel power MOSFET's

G.H. Johnson, J.H. Hohl, Ronald D. Schrimpf et al. · IEEE Transactions on Electron Devices · 1993 · 100 citations

Device Modeling, Electrical Engineering, Power Mosfet +15

SEGR and SEB in n-channel power MOSFETs

M. Allenspach, C. Dachs, G.H. Johnson et al. · IEEE Transactions on Nuclear Science · 1996 · 91 citations

Hardware Security, Electrical Engineering, Reliability Engineering +15

Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)

G.H. Johnson, Ronald D. Schrimpf, K.F. Galloway et al. · IEEE Transactions on Nuclear Science · 1992 · 65 citations

Engineering, Temperature Dependence, Power Electronics +17

Single-event burnout of power bipolar junction transistors

J.L. Titus, G.H. Johnson, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 1991 · 48 citations

Engineering, Power Electronics, High Voltage Engineering +18