D. Schmidt

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 164 citations

Engineering, Electrical Engineering, Microelectronics +9

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

J. Böck, Klaus Aufinger, S. Boguth et al. · 2015 · 163 citations

Engineering, Electrical Engineering, Electronic Materials +14

SiGe HBT with fx/fmax of 505 GHz/720 GHz

B. Heinemann, H. Rücker, R. Barth et al. · 2016 · 149 citations

Engineering, Electrical Engineering, Materials Science +17

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Electrical Engineering, Microelectronics +13

Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs

D. Schmidt, Daniel M. Fleetwood, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 1995 · 119 citations

Engineering, Electrical Engineering, Electronic Materials +16